| PART |
Description |
Maker |
| SBP13007-S |
High Voltage Fast-SwitchingNPN Power Transistor
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| F15 F25 F20 F30 |
Axialleaded Hermetically Sealed High Voltage Fast Rectifier Diode(????靛?2000V锛?钩??????娴?50mA锛?酱??????瀵?????楂??蹇???㈠??存?浜??绠々
Fast Recovery Axial Rectifier1500 V-3000 VIo=0.35 A
RECTIFIER, up to 3kV, 350mA, 250ns
Axialleaded Hermetically Sealed High Voltage Fast Rectifier Diode(反向电压2000V，平均正向电50mA，轴向引脚，密封型，高压快速恢复整流二极管)
Axialleaded Hermetically Sealed High Voltage Fast Rectifier Diode(反向电压2500V，平均正向电50mA，轴向引脚，密封型，高压快速恢复整流二极管)
Axialleaded Hermetically Sealed High Voltage Fast Rectifier Diode(反向电压3000V，平均正向电50mA，轴向引脚，密封型，高压快速恢复整流二极管)
Axialleaded Hermetically Sealed High Voltage Fast Rectifier Diode(反向电压1500V，平均正向电50mA，轴向引脚，密封型，高压快速恢复整流二极管)
Fast Recovery Axial Rectifier.1500 V-3000 V.Io=0.35 A 快速恢复轴向Rectifier.1500 V000五，木卫一\u003d 0.35
|
Semtech Corporation
Microsemi, Corp.
|
| SDHF7.5KM SDHF2.5KM |
High Density,High Voltage,Fast Recovery Rectifier(反向电压7500V，温5℃时平均正向电流1A,高密高电快速恢复整流器)
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT40GF120JRD |
The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一
The Fast IGBT is a new generation of high voltage power IGBTs
Fast IGBT & FRED 1200V 60A
|
Advanced Power Technology, Ltd.
|
| APT60GF120JRD |
Fast IGBT & FRED 1200V 100A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| BYM358X |
Damper-Modulator fast/ high-voltage
Damper-Modulator fast, high-voltage 1500 V, SILICON, RECTIFIER DIODE
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BY359F-1500 BY359F-1500S |
Damperdiodefast.high-voltage
DAMPER DIODE FAST, HIGH-VOLTAGE
Damper diode fast/ high-voltage
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| STTB12006TV1 STTB12006TV2 |
(STTB12006Tx1/2) Ultra-Fast High Voltage Diode
(STTB12006Tx/2) Ultra-Fast High Voltage Diode
|
ST Microelectronics
|
| STX13005-AP STX13005 9151 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压快速开关NPN电源晶体
From old datasheet system
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| APT50GF60BR |
Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
